Novel Ferroelectric Memory Gets Faster, Denser Data Storage
Novel Lateral Data Storage: Two-Dimensional Ferroelectric Semiconductor Memory with a Bottom Contact 100 nm Channel Using In-Plane Polarization
Tags: Tokyo Institute of Technology, Japan, Electronics & Robotics, Computing Technology
Tokyo Tech researchers have developed a novel ferroelectric semiconductor memory using α-In2Se3 with a bottom contact and 100 nm channel, leveraging in-plane polarization. This innovative memory technology promises faster, more energy-efficient data storage and processing, benefiting applications in artificial intelligence, edge computing, and IoT devices. The device demonstrates high on/off ratios, significant memory windows, and excellent retention and endurance. The lateral channel design enables higher memory density and seamless integration with existing fabrication techniques. This advancement marks a significant leap in non-volatile ferroelectric memory technology.
IP Type or Form Factor: Device; Material; Process & Method
TRL: 4 - minimum viable product built in lab
Industry or Tech Area: Semiconductors; Computing Databases & Storage
