Energy Efficient Memory with Aluminium Scandium Nitride
Aluminum Scandium Nitride Films: Enabling Next-Gen Ferroelectric Memory Devices
Tags: Tokyo Institute of Technology, Japan, Electronics & Robotics, Consumer Goods & Services
Aluminum scandium nitride thin films are emerging as a key material for next-generation ferroelectric memory devices due to their high stability and superior ferroelectric properties even after high-temperature hydrogen-included heat treatments. Unlike traditional ferroelectric materials like PZT, these films maintain their polarization states and crystal structure at temperatures up to 600°C. This makes them suitable for high-temperature manufacturing processes used in advanced memory device fabrication. Applications of this technology include memory storage devices that require energy efficiency and fast read/write speeds. The research from Tokyo Tech confirms the robustness and processing versatility of these films, paving the way for their use in advanced electronic components.
IP Type or Form Factor: Material
TRL: 4 - minimum viable product built in lab
Industry or Tech Area: Semiconductors; Home Appliances & Consumer Electronics
